sangdest microelectronics technical data green products data sheet n0311, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MUR1520 MUR1520 ultrafast plastic rectifier applications: switching power supply power switching circuits general purpose features: ultra-fast switching high current capability low reverse leakage current high surge current capability plastic material has ul flammability classification 94v-o this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in mm to-220ac
sangdest microelectronics technical data green products data sheet n0311, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MUR1520 marking diagram: where xxxxx is yywwl mur = device type 15 = forward current (15a) 20 = reverse voltage (200v) ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping MUR1520 to-220ac (pb-free) 50pcs / tube for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 200 v average forward current i f (av) 50% duty cycle @tc=100c, rectangular wave form 15 a peak one cycle non- repetitive surge current (per leg) i fsm 8.3ms, half sine pulse 110 a
sangdest microelectronics technical data green products data sheet n0311, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MUR1520 electrical characteristics: characteristics symbol condition max. units forward voltage drop* v f1 @ 15a, pulse, t j = 25 c 1.05 v v f2 @ 15a, pulse, t j = 150 c 0.85 v i r1 @v r = rated v r t j = 25 c 10 a reverse current* i r2 @v r = rated v r t j = 125 c 500 a reverse recovery time t rr i f =1a; -di/dt=50a/us; v r =30v; t vj =25c 35 ns * pulse width < 300 s, duty cycle < 2% thermal-mechanical specifications: characteristics symbol condition specification units junction temperature t j - -55 to +150 c storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r q jc dc operation 1.5 c/w approximate weight wt - 1.6 g case style to-220ac
sangdest microelectronics technical data green products data sheet n0311, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MUR1520 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 percent of peak reverse voltage.(%) instantaneous reverse current.( ? a) 10 100 1000 0 5 10 15 20 25 30 35 40 reverse voltage.(v) junction capacitance.(pf) 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 forward voltage drop-vfm(v) instantaneous forwar current(a) tj=125 tj=25 fig.1-typical junction capacitance fig.2-typical reverse characteristics fig.3-typical forward voltage drop characteristics tj=25 tj=25 tj=125
sangdest microelectronics technical data green products data sheet n0311, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MUR1520 disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchaser s are advised to contact the smc - sangdest microel ectronics (nanjing) co., ltd sales department for the latest version of the data sheet(s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other a rrangement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users unit s according to the datasheet(s). smc - sangdest mic roelectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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